Development toward high-power sub-1-ohm DC-67 GHz RF switches using phase change materials for reconfigurable RF front-end

We report GeTe-based phase change material RF switches with on-state resistance of 0.07 ohm*mm and off-state capacitance of 20 fF/mm. The RF switch figure-of-merit, R on *C off is comparable to RF MEMS ohmic switches. The PCM RF shunt and series switches were fabricated for the first time in a later...

Full description

Saved in:
Bibliographic Details
Published in2014 IEEE MTT-S International Microwave Symposium (IMS2014) pp. 1 - 3
Main Authors Jeong-sun Moon, Hwa-chang Seo, Duc Le
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2014
Subjects
Indexes
insertion loss
linearity
Loss measurement
Metals
Micromechanical devices
Phase change materials
phase-change material
Radio frequency
RF switches
Switches
tunable filters
wireless communications
Online AccessGet full text

Cover

More Information
Summary:We report GeTe-based phase change material RF switches with on-state resistance of 0.07 ohm*mm and off-state capacitance of 20 fF/mm. The RF switch figure-of-merit, R on *C off is comparable to RF MEMS ohmic switches. The PCM RF shunt and series switches were fabricated for the first time in a lateral FET configuration to reduce parasitics, different from the vertical via switches. In a shunt switch configuration, isolation of 30 dB was achieved up to 67 GHz with return loss of 15 dB. RF power handling was tested with ~10 W for series and 3 W for shunt configurations. Harmonic powers were suppressed more than 100 dBc at fundamental power of 1 W, for future tunable and reconfigurable RF technology.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2014.6848334