Investigation of voltages and electric fields in silicon semi 3D radiation detectors using Silvaco/ATLAS simulation tool and a scanning electron microscope

The structure of silicon semi three-dimensional radiation detector is simulated on purpose to find out its electrical characteristics such as the depletion voltage and electric field. Two-dimensional simulation results are compared to voltage and electric field measurements done by a scanning electr...

Full description

Saved in:
Bibliographic Details
Published inIEEE Nuclear Science Symposium Conference Record, 2005 Vol. 3; pp. 1379 - 1382
Main Authors Palviainen, T., Leinonen, K., Tuuva, T., Eranen, S., Harkonen, J., Luukka, P., Tuovinen, E.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2005
Subjects
Anodes
Cathodes
Doping profiles
Electric variables measurement
Electrodes
Radiation detectors
Scanning electron microscopy
Silicon radiation detectors
Strips
Voltage
Online AccessGet full text

Cover

More Information
Summary:The structure of silicon semi three-dimensional radiation detector is simulated on purpose to find out its electrical characteristics such as the depletion voltage and electric field. Two-dimensional simulation results are compared to voltage and electric field measurements done by a scanning electron microscope.
ISBN:0780392213
9780780392212
ISSN:1082-3654
2577-0829
DOI:10.1109/NSSMIC.2005.1596576