A Novel Gate-Injection Program/Erase P-Channel NAND-Type Flash Memory with High (10M Cycle) Endurance

We have successfully developed a novel nitride-trapping non-volatile memory device using gate injection for program and erase operations. The device is a p-channel bandgap-engineered SONOS (BE-SONOS), but with ultra-thin ONO tunneling dielectric grown on top of the trapping nitride. Programming and...

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Bibliographic Details
Published in2007 IEEE Symposium on VLSI Technology pp. 140 - 141
Main Authors Hang-Ting Lue, Erh-Kun Lai, Szu-Yu Wang, Ling-Wu Yang, Tahone Yang, Kuang-Chao Chen, Kuang-Yeu Hsieh, Rich Liu, Chih-Yuan Lu
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2007
Subjects
Charge carrier processes
Degradation
Dielectric devices
Electron traps
Flash memory
Geometry
Interface states
Nonvolatile memory
SONOS devices
Tunneling
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Summary:We have successfully developed a novel nitride-trapping non-volatile memory device using gate injection for program and erase operations. The device is a p-channel bandgap-engineered SONOS (BE-SONOS), but with ultra-thin ONO tunneling dielectric grown on top of the trapping nitride. Programming and erasing are by -FN electron injection and +FN hole injection from the poly gate, respectively. Since gate oxide is not used as the tunnel dielectric, it is spared of the program/erase current stressing, thus causes much less interface state generation after P/E cycling stressing. Very high endurance (10 M cycle P/E) is achieved owing to suppressed channel interface (S.S. and gm) degradation. Moreover, due to the gate injection instead of channel injection this novel device is insensitive to STI bird's beak geometry. Successful p-channel NAND array characteristics including the program inhibit and reading characteristics are demonstrated.
ISBN:4900784036
9784900784031
ISSN:0743-1562
DOI:10.1109/VLSIT.2007.4339759