Systematic Study of the Effects of Modulation P-Doping on 1.3μM InAs/GaAs Dot-in-Well Lasers

We report a systematic study of modulation p-doping effects on QD lasers performance, we discuss the role of p-doping in: threshold current, gain and loss; gain profile; temperature sensitivity and modulation bandwidth.

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Bibliographic Details
Published in2007 IEEE 19th International Conference on Indium Phosphide & Related Materials pp. 517 - 520
Main Authors Alexander, R.R., Childs, D., Agarwal, H., Groom, K.M., Liu, H.Y., Hopkinson, M., Hogg, R.A.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2007
Subjects
Doping
Gallium arsenide
Optical scattering
Performance gain
Quantum dot lasers
Stationary state
Temperature dependence
Temperature sensors
Threshold current
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Summary:We report a systematic study of modulation p-doping effects on QD lasers performance, we discuss the role of p-doping in: threshold current, gain and loss; gain profile; temperature sensitivity and modulation bandwidth.
ISBN:9781424408740
1424408741
ISSN:1092-8669
DOI:10.1109/ICIPRM.2007.381242