High performance micro-machined inductors on CMOS substrate

Using a combination of micromachining and three-dimensional (3-D) processing technologies, we have designed, fabricated, and tested inductors on CMOS grade Si substrate (10/spl sim/20 /spl Omega/-cm resistivity) which exhibit very high quality factor and high resonant frequency. A 1.2 nH inductor in...

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Bibliographic Details
Published inIEEE MTT-S International Microwave Symposium Digest, 2005 pp. 701 - 704
Main Authors Dae-Hee Weon, Jeong-Il Kim, Jong-Hyeok Jeon, Saeed Mohammadi, Katehi, L.P.B.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2005
Subjects
Chromium
CMOS process
CMOS technology
Conductivity
Gold
Inductors
Micromachining
Q factor
Resonant frequency
Testing
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Summary:Using a combination of micromachining and three-dimensional (3-D) processing technologies, we have designed, fabricated, and tested inductors on CMOS grade Si substrate (10/spl sim/20 /spl Omega/-cm resistivity) which exhibit very high quality factor and high resonant frequency. A 1.2 nH inductor in this process achieves a record high quality factor of /spl sim/140 at 12GHz, with Q > 100 for frequencies between 8 to 20GHz. The technology to fabricate these inductors is based on one step deposition and electroplating of a stressed layered metal combination of Cr and Au and is fully compatible with CMOS technology.
ISBN:9780780388451
0780388453
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2005.1516705