Significant improvement in reliability of HfSiON gate insulator

Instability during positive bias temperature (PBT) and channel hot carrier (CHC) stresses in an nFET is studied for a HfSiON gate insulator with an interface layer formed by several methods. The threshold voltage shift (/spl Delta/V/sub th/) during PBT stress shows strong dependence on the gate diel...

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Bibliographic Details
Published in2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual pp. 644 - 645
Main Authors Inoue, M., Yugami, J., Fujita, T., Shiga, K., Mizutani, M., Nomura, K., Tsuchimoto, J., Ohno, Y., Yoneda, M.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2005
Subjects
Chemicals
Dielectrics
Electron traps
Hot carriers
Insulation
Plasma temperature
Reliability engineering
Stress
Thermal degradation
Threshold voltage
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Summary:Instability during positive bias temperature (PBT) and channel hot carrier (CHC) stresses in an nFET is studied for a HfSiON gate insulator with an interface layer formed by several methods. The threshold voltage shift (/spl Delta/V/sub th/) during PBT stress shows strong dependence on the gate dielectric structure. Significant improvement is observed for HfSiON/SiON and post-deposition-annealed HfSiON being almost equivalent to the SiON reference, while HfSiON/chemical oxide shows large /spl Delta/V/sub th/. The result is discussed in terms of electron trapping efficiency in the HfSiON layer. The CHC is also shown to have similar dependence on the gate dielectric structure.
ISBN:0780388038
9780780388031
ISSN:1541-7026
1938-1891
DOI:10.1109/RELPHY.2005.1493184