Advancing Lithium Niobate Based Thin Film Devices for 5G Front-Ends

A brief review of the motivations and development effort for LN thin film devices is offered before recent advances on LN thin film devices are reported. LN devices for a sub-6 GHz band and X-band have designed and fabricated. As a result of the design and implementation effort, the most advanced LN...

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Bibliographic Details
Published in2019 IEEE MTT-S International Microwave Symposium (IMS) pp. 881 - 884
Main Authors Yansong Yang, Ruochen Lu, Kourani, Ali, Songbin Gong
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2019
Subjects
acoustic
Acoustics
Electrodes
filters
Lithium niobate
Microwave filters
Resonant frequency
Resonator filters
resonators
Thin film devices
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Summary:A brief review of the motivations and development effort for LN thin film devices is offered before recent advances on LN thin film devices are reported. LN devices for a sub-6 GHz band and X-band have designed and fabricated. As a result of the design and implementation effort, the most advanced LN resonator is reported at 1.7 GHz with a k t 2 of 14%, a high Q of 3112, a FoM of 435, and a spurious-free response, greatly surpassing the state of art at this frequency range. An acoustic prototype filter at 10 GHz is also demonstrated with an insertion loss of 3.8 dB, out of band rejection of 20 dB, and an FBW of 0.8%.
ISSN:2576-7216
DOI:10.1109/MWSYM.2019.8700993