Effect of a thick buffer in the OFF state simulation of AlGaN/GaN HEMT

Study of the buffer thickness dependence of the OFF state characteristics of AlGaN/GaN HEMTs has beenattempted. The buffer conduction in OFF state has been studiedtaking into account the effect of buffer traps and the response ofthose traps under varying Source-Drain voltage in both the pre-breakdow...

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Bibliographic Details
Published in2018 8th IEEE India International Conference on Power Electronics (IICPE) pp. 1 - 5
Main Authors Gupta, A., Dohare, H., Mishra, Sukalpa, Sharma, Chandan, Bhattacharya, S., Rawal, D.S., Karmalkar, Shreepad, Natarajan, V.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.12.2018
Subjects
AlGaN/GaN HEMT
Breakdown voltage
buffer traps
Electric breakdown
Electron traps
Gallium nitride
Impact ionization
OFF-state characetristics
Space-Charge Limited Conduction
TCAD simulation
Temperature dependence
Temperature measurement
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Summary:Study of the buffer thickness dependence of the OFF state characteristics of AlGaN/GaN HEMTs has beenattempted. The buffer conduction in OFF state has been studiedtaking into account the effect of buffer traps and the response ofthose traps under varying Source-Drain voltage in both the pre-breakdown and near breakdown regions. The temperaturedependence of the current-voltage characteristics have beenaddressed and related to the trap occupancy as a function ofvoltage and temperature. A quantitative measure of the trapconcentration has been estimated to observe the expected device characteristics without any artifacts introduced by the buffer.
ISSN:2160-3170
DOI:10.1109/IICPE.2018.8709607