Study on surface acoustic wave propagation for a non-planar piezoelectric thin film device with high acoustic impedance material reflectors

A detailed study on the improved electrical properties of piezoelectric thin film AlN device comparing an integration of reflectors with different materials. A low acoustic impedance material with a range between 25E6 kg/m 3 ·s to 35E6 kg/m 3 ·s and another with high acoustic impedance in the range...

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Bibliographic Details
Published in2017 IEEE Asia Pacific Microwave Conference (APMC) pp. 1273 - 1275
Main Authors Marigo, Eloi, Soundara, Mohanraj, Goutham, Maheshlal, Fei, Chan Buan, Krishnan, Mugilan Gopal, Bin, Jazril, Din, Jamil, Binti Mohd Radzi, Anis Amiera, Binti Shaari, Nur Faatyhah
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.11.2017
Subjects
Acoustics
aluminium nitride
Aluminum nitride
CMOS
CMOS process
Fabrication
III-V semiconductor materials
Impedance
Micromechanical devices
Thin film surface acoustic wave
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Summary:A detailed study on the improved electrical properties of piezoelectric thin film AlN device comparing an integration of reflectors with different materials. A low acoustic impedance material with a range between 25E6 kg/m 3 ·s to 35E6 kg/m 3 ·s and another with high acoustic impedance in the range between 55E6 kg/m 3 ·s to 65E6 kg/m 3 ·s is presented together with the CMOS integration fabrication challenges of such non standard materials.
DOI:10.1109/APMC.2017.8251693