Low-cost and high-performance 1.3-μm AlGaInAs-InP uncooled laser diodes

In this letter, we utilize a self-terminated oxide polish (STOP) planarization technique to fabricate high-yield, high-performance, low-cost, and uncooled 1.3-mum ridge-waveguide AlGaInAs-InP laser diodes (LDs). The STOP technique is superior to the polyimide planarization, which suffers from high-t...

Full description

Saved in:
Bibliographic Details
Published inIEEE photonics technology letters Vol. 18; no. 12; pp. 1380 - 1382
Main Authors Te-Chin Peng, Yun-Hsun Huang, Chih-Chao Yang, Kun-Fu Huang, Feng-Ming Lee, Chih-Wei Hu, Meng-Chyi Wu, Chong-Long Ho
Format Journal Article
LanguageEnglish
Published IEEE 15.06.2006
Subjects
AlGaInAs
Bandwidth
Conducting materials
Diode lasers
High speed optical techniques
laser diode (LD)
Optical feedback
Optical modulation
Optical transmitters
Parasitic capacitance
Planarization
Polyimides
self-terminated oxide polish (STOP)
Online AccessGet full text

Cover

More Information
Summary:In this letter, we utilize a self-terminated oxide polish (STOP) planarization technique to fabricate high-yield, high-performance, low-cost, and uncooled 1.3-mum ridge-waveguide AlGaInAs-InP laser diodes (LDs). The STOP technique is superior to the polyimide planarization, which suffers from high-temperature sustainability. The LDs fabricated by the STOP technique exhibit threshold currents of 8.5 and 30.5 mA, and light output powers of 25.9 and 4.8 mW at 100 mA for 20degC and 110degC, respectively. The characteristic temperatures (T 0 ) are 82.6 K from -30degC to 80degC and 55.9 K from 80degC to 110degC. Since the metal pad lies on a thick SiO 2 layer, the parasitic capacitance can be effectively lowered to 2 pF. The 3-dB modulation bandwidths of the LDs at 50 mA are 12.1 and 9.44 GHz at 20degC and 90degC, respectively
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2006.875524