160-270-GHz InP HEMT MMIC Low-Noise Amplifiers

We present two low-noise amplifiers for the frequency range of 160 to 270 GHz. The amplifiers were fabricated using a 35-nm InP HEMT technology and designed for room temperature and cryogenic operation. A four-stage amplifier in a common-source topology and a three-stage amplifier utilizing a cascod...

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Bibliographic Details
Published in2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) pp. 1 - 4
Main Authors Varonen, M., Larkoski, P., Fung, A., Samoska, L., Kangaslahti, P., Gaier, T., Lai, R., Sarkozy, S.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2012
Subjects
Cryogenics
Low-noise amplifiers
MMICs
Noise
Noise measurement
Semiconductor device measurement
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Summary:We present two low-noise amplifiers for the frequency range of 160 to 270 GHz. The amplifiers were fabricated using a 35-nm InP HEMT technology and designed for room temperature and cryogenic operation. A four-stage amplifier in a common-source topology and a three-stage amplifier utilizing a cascode stage at the output achieve 15 to 25-dB on-wafer measured gain from 160 to 270 GHz. When packaged in WR5 waveguide housings the amplifiers exhibit room temperature measured noise of 600 to 760 K from 160 to 220 GHz. When cryogenically cooled the three-stage amplifier shows a noise of 80 to 115 K over the range of 164 to 220 GHz. Furthermore, our initial room temperature measurements show a noise figure of 7-8 dB over the 220 to 252 GHz range for a four-stage amplifier packaged in a WR3 waveguide housing.
ISBN:1467309281
9781467309288
ISSN:1550-8781
2374-8443
DOI:10.1109/CSICS.2012.6340058