Cosmic ray ruggedness of IGBTs for hybrid vehicles

Power semiconductors that are used under high voltage conditions in hybrid vehicles (HVs) are required to have a high destruction tolerance against cosmic rays as well as to meet conventional quality standards. This paper describes an investigation into the failure mechanism for single event burnout...

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Bibliographic Details
Published in2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD) pp. 129 - 132
Main Authors Nishida, S, Shoji, T, Ohnishi, T, Fujikawa, T, Nose, N, Ishiko, M, Hamada, K
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2010
Subjects
Buffer layers
Circuits
Cosmic rays
Electrodes
Failure analysis
Insulated gate bipolar transistors
Neutrons
Substrates
Vehicles
Voltage
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Summary:Power semiconductors that are used under high voltage conditions in hybrid vehicles (HVs) are required to have a high destruction tolerance against cosmic rays as well as to meet conventional quality standards. This paper describes an investigation into the failure mechanism for single event burnouts (SEB) induced by cosmic rays in insulated gate bipolar transistors (IGBTs). Device destruction tolerance can be greatly improved by adopting an optimized device design that greatly suppresses parasitic thyristor action.
ISBN:1424477182
9781424477180
ISSN:1063-6854
1946-0201