The CV curve investigation of MIS structure based on CdHgTe

The CdHgTe (MCT) is the most and single material, which comply with industrial and military demand in middle and far infrared area for high quality imaging (3-5 /spl mu/m and 8-12 /spl mu/m accordingly) of far located objects. Further development of hi-end quality focal plane arrays based on CdHgTe...

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Published inProceedings. 6th Annual. 2005 International Siberian Workshop and Tutorials on Electron Devices and Materials, 2005 pp. 51 - 52
Main Author Yartsev, A.V.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2005
Subjects
Conductors
Frequency modulation
Insulation
Linearity
Metal-insulator structures
Photonic band gap
Physics
Sputtering
Surface charging
Voltage
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Summary:The CdHgTe (MCT) is the most and single material, which comply with industrial and military demand in middle and far infrared area for high quality imaging (3-5 /spl mu/m and 8-12 /spl mu/m accordingly) of far located objects. Further development of hi-end quality focal plane arrays based on CdHgTe needed detail investigation of electrophysical properties of devices, based on MCT. The metal-insulator-semiconductor (MIS) is the most promising photoelectrical devices based on MCT. However, it's a small knowledge about surface properties of CdHgTe. This article announced about successful realization of MIS MCT and investigation of surface properties by measurement and analyses CV curves.
ISBN:5778204914
9785778204911
ISSN:1815-3712
DOI:10.1109/SIBEDM.2005.195582