The CV curve investigation of MIS structure based on CdHgTe
The CdHgTe (MCT) is the most and single material, which comply with industrial and military demand in middle and far infrared area for high quality imaging (3-5 /spl mu/m and 8-12 /spl mu/m accordingly) of far located objects. Further development of hi-end quality focal plane arrays based on CdHgTe...
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Published in | Proceedings. 6th Annual. 2005 International Siberian Workshop and Tutorials on Electron Devices and Materials, 2005 pp. 51 - 52 |
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Main Author | |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
2005
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Subjects | |
Online Access | Get full text |
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Summary: | The CdHgTe (MCT) is the most and single material, which comply with industrial and military demand in middle and far infrared area for high quality imaging (3-5 /spl mu/m and 8-12 /spl mu/m accordingly) of far located objects. Further development of hi-end quality focal plane arrays based on CdHgTe needed detail investigation of electrophysical properties of devices, based on MCT. The metal-insulator-semiconductor (MIS) is the most promising photoelectrical devices based on MCT. However, it's a small knowledge about surface properties of CdHgTe. This article announced about successful realization of MIS MCT and investigation of surface properties by measurement and analyses CV curves. |
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ISBN: | 5778204914 9785778204911 |
ISSN: | 1815-3712 |
DOI: | 10.1109/SIBEDM.2005.195582 |