Optical Gain Analysis of Strain Compensated InGaN-AlGaN Quantum Well Active Regions for Lasers Emitting at 420-500 nm

Strain-compensated InGaN quantum wells with tensile AlGaN barriers are analyzed as improved gain media for laser diodes emitting at 420-500 nm. The optical gain analysis, taking into account spontaneous and piezoelectric polarizations, exhibits significant improvement in the peak optical gain and di...

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Bibliographic Details
Published in2007 International Conference on Numerical Simulation of Optoelectronic Devices pp. 69 - 70
Main Authors Hongping Zhao, Arif, R.A., Yik-Khoon Ee, Tansu, N.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2007
Subjects
Aluminum gallium nitride
Biomedical optical imaging
Capacitive sensors
Charge carrier density
Gallium nitride
Light emitting diodes
Performance gain
Piezoelectric polarization
Quantum well lasers
Stimulated emission
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Summary:Strain-compensated InGaN quantum wells with tensile AlGaN barriers are analyzed as improved gain media for laser diodes emitting at 420-500 nm. The optical gain analysis, taking into account spontaneous and piezoelectric polarizations, exhibits significant improvement in the peak optical gain and differential gain for the strain compensated structures.
ISBN:1424414318
9781424414314
ISSN:2158-3234
DOI:10.1109/NUSOD.2007.4349028