Gain saturation in 60-fs mode-locked semiconductor laser
A passively mode-locked optically-pumped InGaAs/GaAs quantum well laser with an intracavity semiconductor saturable absorber mirror emits sub-100-fs pulses. Pulse energy declines steeply as pulse duration is reduced below 100 fs due to gain saturation.
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Published in | CLEO/QELS: 2010 Laser Science to Photonic Applications pp. 1 - 2 |
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Main Authors | , , , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.05.2010
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Subjects | |
Online Access | Get full text |
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Summary: | A passively mode-locked optically-pumped InGaAs/GaAs quantum well laser with an intracavity semiconductor saturable absorber mirror emits sub-100-fs pulses. Pulse energy declines steeply as pulse duration is reduced below 100 fs due to gain saturation. |
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DOI: | 10.1364/CLEO.2010.CMY4 |