Gain saturation in 60-fs mode-locked semiconductor laser

A passively mode-locked optically-pumped InGaAs/GaAs quantum well laser with an intracavity semiconductor saturable absorber mirror emits sub-100-fs pulses. Pulse energy declines steeply as pulse duration is reduced below 100 fs due to gain saturation.

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Bibliographic Details
Published inCLEO/QELS: 2010 Laser Science to Photonic Applications pp. 1 - 2
Main Authors Quarterman, Adrian H, Wilcox, Keith G, Apostolopoulos, Vasilis, Mihoubi, Zakaria, Barnes, Mark, Farrer, Ian, Ritchie, David A, Tropper, Anne
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2010
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Summary:A passively mode-locked optically-pumped InGaAs/GaAs quantum well laser with an intracavity semiconductor saturable absorber mirror emits sub-100-fs pulses. Pulse energy declines steeply as pulse duration is reduced below 100 fs due to gain saturation.
DOI:10.1364/CLEO.2010.CMY4