Modeling of Polyimide MIM Capacitors for Applications in Planar Monolithic Microwave Integrated Circuits

Polymide metal-insulator-metal (MIM) overlay capacitors for use in monolithic microwave integrated circuits (MMICs) based on high electron mobility transistors (HEMTs) on gallium arsenide substrates are presented. Modeling of the capacitors was performed using a 2-dimensional electromagnetic CAD sim...

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Bibliographic Details
Published in2006 IEEE International Conference on Semiconductor Electronics pp. 1030 - 1033
Main Authors Sanusi, R., Rahim, A.I.A., Osman, M.N., Kushairi, N., Rasmi, A., Muhammad, N.F.I., Yahya, M.R., Mat, A.F.A.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.11.2006
Subjects
Application specific integrated circuits
Electromagnetic scattering
HEMTs
Integrated circuit modeling
Microwave integrated circuits
MIM capacitors
MMICs
MODFETs
Monolithic integrated circuits
Polyimides
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Summary:Polymide metal-insulator-metal (MIM) overlay capacitors for use in monolithic microwave integrated circuits (MMICs) based on high electron mobility transistors (HEMTs) on gallium arsenide substrates are presented. Modeling of the capacitors was performed using a 2-dimensional electromagnetic CAD simulator to obtain Scattering (S-) parameters for different capacitor dimensions for operating frequencies from 0.05 to 8 GHz. The behaviour of the capacitor as a function of operating frequencies is studied by means of Smith chart. The capacitor is finally represented by a proposed equivalent circuit model to describe its overall behavior for planar MMIC simulations.
ISBN:9780780397309
0780397304
DOI:10.1109/SMELEC.2006.380796