A 6.7 MHz nanoelectromechanical ring oscillator using curved cantilever switches coated with amorphous carbon
Nanoelectromechanical (NEM) switches have the potential to complement or replace traditional CMOS transistors in the area of ultra-low power digital electronics. This paper reports the demonstration of the first ring oscillator built using cell-level digital logic elements based on curved NEM switch...
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Published in | 2014 44th European Solid State Device Research Conference (ESSDERC) pp. 66 - 69 |
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Main Authors | , , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.09.2014
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Subjects | |
Online Access | Get full text |
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Summary: | Nanoelectromechanical (NEM) switches have the potential to complement or replace traditional CMOS transistors in the area of ultra-low power digital electronics. This paper reports the demonstration of the first ring oscillator built using cell-level digital logic elements based on curved NEM switches. The NEM switch has a size of 5×3 μm 2 , an air gap of 60 nm and is coated with amorphous carbon (a-C) for reliable operation. The ring oscillator operates at a frequency of 6.7 MHz and confirms the simulated inverter propagation delay of 25 ns. The successful fabrication and measurement of this demonstrator is a key milestone on the way towards an optimized, scaled technology with sub-nanosecond switching times, lower operating voltages and VLSI implementation. |
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ISBN: | 9781479943784 1479943789 |
ISSN: | 1930-8876 |
DOI: | 10.1109/ESSDERC.2014.6948759 |