A 6.7 MHz nanoelectromechanical ring oscillator using curved cantilever switches coated with amorphous carbon

Nanoelectromechanical (NEM) switches have the potential to complement or replace traditional CMOS transistors in the area of ultra-low power digital electronics. This paper reports the demonstration of the first ring oscillator built using cell-level digital logic elements based on curved NEM switch...

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Published in2014 44th European Solid State Device Research Conference (ESSDERC) pp. 66 - 69
Main Authors Ayala, Christopher L., Grogg, Daniel, Bazigos, Antonios, Badia, Montserrat Fernandez-Bolanos, Duerig, Urs T., Despont, Michel, Hagleitner, Christoph
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2014
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Summary:Nanoelectromechanical (NEM) switches have the potential to complement or replace traditional CMOS transistors in the area of ultra-low power digital electronics. This paper reports the demonstration of the first ring oscillator built using cell-level digital logic elements based on curved NEM switches. The NEM switch has a size of 5×3 μm 2 , an air gap of 60 nm and is coated with amorphous carbon (a-C) for reliable operation. The ring oscillator operates at a frequency of 6.7 MHz and confirms the simulated inverter propagation delay of 25 ns. The successful fabrication and measurement of this demonstrator is a key milestone on the way towards an optimized, scaled technology with sub-nanosecond switching times, lower operating voltages and VLSI implementation.
ISBN:9781479943784
1479943789
ISSN:1930-8876
DOI:10.1109/ESSDERC.2014.6948759