A New Fault Detection Technique for IGBT Based on Gate Voltage Monitoring

• Published in: 2007 IEEE Power Electronics Specialists Conference pp. 1001 - 1005
• Main Authors: Rodriguez, M.A., Claudio, A., Theilliol, D., Vela, L.G.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.06.2007
• Subjects: Circuit faults; Delay effects; Equations; Failure analysis; Fault detection; Insulated gate bipolar transistors; Monitoring; MOSFET circuits; Signal analysis; Voltage measurement

In this paper a new failure technique for IGBT is presented, the method is based on analysis and measurement of gate voltage signal. The physical model equations and failure mechanisms of IGBT reported in the literature are used to define the failure detection criterion. Some experimental results of...