A New Fault Detection Technique for IGBT Based on Gate Voltage Monitoring

In this paper a new failure technique for IGBT is presented, the method is based on analysis and measurement of gate voltage signal. The physical model equations and failure mechanisms of IGBT reported in the literature are used to define the failure detection criterion. Some experimental results of...

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Bibliographic Details
Published in2007 IEEE Power Electronics Specialists Conference pp. 1001 - 1005
Main Authors Rodriguez, M.A., Claudio, A., Theilliol, D., Vela, L.G.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2007
Subjects
Circuit faults
Delay effects
Equations
Failure analysis
Fault detection
Insulated gate bipolar transistors
Monitoring
MOSFET circuits
Signal analysis
Voltage measurement
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Summary:In this paper a new failure technique for IGBT is presented, the method is based on analysis and measurement of gate voltage signal. The physical model equations and failure mechanisms of IGBT reported in the literature are used to define the failure detection criterion. Some experimental results of a gate voltage signal measurement in a fault free and faulty case is presented to validate proposed technique.
ISBN:9781424406548
1424406544
ISSN:0275-9306
DOI:10.1109/PESC.2007.4342127