Terahertz emission and reflection associated with surface plasmon polaritons in n-GaN microstructures

Surface plasmon polaritons at the n-GaN/vacuum interface are investigated. Experimental studies of terahertz radiation reflection and emission are performed on heavily silicon-doped GaN epitaxial layers grown on sapphire substrates. To provide interaction of THz radiation with the surface plasmon po...

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Published in2014 39th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz) pp. 1 - 2
Main Authors Melentyev, Grigory A., Shalygin, Vadim A., Moldavskaya, Maria D., Panevin, Vadim Yu, Vorobjev, Leonid E., Poroshin, Vladimir N., Nykanen, Henri, Riuttanen, Lauri, Svensk, Olli, Suihkonen, Sami
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2014
Subjects
Electric fields
Epitaxial layers
Gallium nitride
Gratings
Plasmons
Reflection
Surface topography
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Summary:Surface plasmon polaritons at the n-GaN/vacuum interface are investigated. Experimental studies of terahertz radiation reflection and emission are performed on heavily silicon-doped GaN epitaxial layers grown on sapphire substrates. To provide interaction of THz radiation with the surface plasmon polaritons, a regular grating was fabricated on the outer surface of the epitaxial layer. Study of terahertz radiation emission from the microstructures under lateral electric field shows that the scattering of non-equilibrium surface plasmon polaritons on the grating makes a significant contribution to the radiation intensity.
ISSN:2162-2027
DOI:10.1109/IRMMW-THz.2014.6956396