SEM-based methodology for root cause analysis of wafer edge and bevel defects

Monitoring detectivity of the wafer edge, bevel and apex - the areas beyond the pattern - is becoming increasingly important in the yield enhancement efforts of high-end fabs. In this paper we present a methodology for root cause analysis of edge and bevel defects, based on inline SEM review and EDX...

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Bibliographic Details
Published in2008 IEEE/SEMI Advanced Semiconductor Manufacturing Conference pp. 11 - 14
Main Authors Porat, R., Dotan, K., Hemar, S., Levin, L., Li, K., Sung, G.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2008
Subjects
Image edge detection
Monitoring
Morphology
Optical control
Optical films
Optical microscopy
Optical polymers
Scanning electron microscopy
Semiconductor device manufacture
Semiconductor materials
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Summary:Monitoring detectivity of the wafer edge, bevel and apex - the areas beyond the pattern - is becoming increasingly important in the yield enhancement efforts of high-end fabs. In this paper we present a methodology for root cause analysis of edge and bevel defects, based on inline SEM review and EDX-based material analysis.
ISBN:1424419646
9781424419647
ISSN:1078-8743
2376-6697
DOI:10.1109/ASMC.2008.4528998