SEM-based methodology for root cause analysis of wafer edge and bevel defects
Monitoring detectivity of the wafer edge, bevel and apex - the areas beyond the pattern - is becoming increasingly important in the yield enhancement efforts of high-end fabs. In this paper we present a methodology for root cause analysis of edge and bevel defects, based on inline SEM review and EDX...
Saved in:
Published in | 2008 IEEE/SEMI Advanced Semiconductor Manufacturing Conference pp. 11 - 14 |
---|---|
Main Authors | , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.05.2008
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | Monitoring detectivity of the wafer edge, bevel and apex - the areas beyond the pattern - is becoming increasingly important in the yield enhancement efforts of high-end fabs. In this paper we present a methodology for root cause analysis of edge and bevel defects, based on inline SEM review and EDX-based material analysis. |
---|---|
ISBN: | 1424419646 9781424419647 |
ISSN: | 1078-8743 2376-6697 |
DOI: | 10.1109/ASMC.2008.4528998 |