A new dose rate model for SOI MOSFETs and its implementation in SPICE

A new SPICE based dose rate model is proposed for SOI MOSFETs, which accounts for collections of excess carriers by both source/body and drain/body junctions. It is also identified that the parasitic bipolar transistor does not play a significant role within the range of dose rate of interest. An im...

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Bibliographic Details
Published in2005 IEEE International SOI Conference Proceedings pp. 112 - 113
Main Authors Liu, H.Y., Golke, K.W., Liu, S.T.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2005
Subjects
Bipolar transistors
Charge carrier processes
Circuits
Diodes
Equations
MOS devices
MOSFETs
P-n junctions
Photoconductivity
SPICE
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Summary:A new SPICE based dose rate model is proposed for SOI MOSFETs, which accounts for collections of excess carriers by both source/body and drain/body junctions. It is also identified that the parasitic bipolar transistor does not play a significant role within the range of dose rate of interest. An implementation method for circuit level simulation is described. The validity of this model has been verified by test results.
ISBN:0780392124
9780780392120
ISSN:1078-621X
2577-2295
DOI:10.1109/SOI.2005.1563556