Gain Performance of GeSn based n-p-n Heterojunction Phototransistor

A n-p-n heterojunction phototransitor with Ge 1-x Sn x base is presented. The work is focussed on effect of Sn concentration on the gain performance of the device based on optimised base and collector doping.

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Bibliographic Details
Published in2018 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) pp. 35 - 36
Main Authors Pandey, Ankit Kumar, Basu, Rikmantra, Chang, Guo-En
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.11.2018
Subjects
Absorption
Doping
GeSn alloy
Heterojunction Phototransistor
Heterojunctions
Metals
Multiple quantum well
Photonic band gap
Phototransistors
Silicon
Online AccessGet full text
ISSN2158-3242
DOI10.1109/NUSOD.2018.8570239

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Abstract A n-p-n heterojunction phototransitor with Ge 1-x Sn x base is presented. The work is focussed on effect of Sn concentration on the gain performance of the device based on optimised base and collector doping.
AbstractList A n-p-n heterojunction phototransitor with Ge 1-x Sn x base is presented. The work is focussed on effect of Sn concentration on the gain performance of the device based on optimised base and collector doping.
Author Basu, Rikmantra
Chang, Guo-En
Pandey, Ankit Kumar
Author_xml – sequence: 1
  givenname: Ankit Kumar
  surname: Pandey
  fullname: Pandey, Ankit Kumar
  organization: Department of Electronics and Communication Engineering, National Institute of Technology Delhi, India
– sequence: 2
  givenname: Rikmantra
  surname: Basu
  fullname: Basu, Rikmantra
  organization: Department of Electronics and Communication Engineering, National Institute of Technology Delhi, India
– sequence: 3
  givenname: Guo-En
  surname: Chang
  fullname: Chang, Guo-En
  organization: Dept. of Mechanical Engineering, National Chung-Cheng University, Taiwan
BookMark eNotj81KAzEYRaMoWOu8gG7yAlPzP8lSRp0KxQq165KZfMEUm5QkLnx7C3Z1N4fDubfoKqYICN1TsqCUmMf37Wb9vGCE6oWWHWHcXKDGdJpKrpWUxvBLNGNU6pYzwW5QU8qeEMKU5pqLGeoHGyL-gOxTPtg4AU4eD7CJeLQFHI7tsY14CRVy2v_EqYZ0wr9STTXbWEKpKd-ha2-_CzTnnaPt68tnv2xX6-Gtf1q1gXaytmyyinfWg2DaSzEaN06KAGHu1OIEKNUJTaiyxjMGRE7cEWscM85wo-nI5-jh3xsAYHfM4WDz7-58m_8BqWRNDw
ContentType Conference Proceeding
DBID 6IE
6IL
CBEJK
RIE
RIL
DOI 10.1109/NUSOD.2018.8570239
DatabaseName IEEE Electronic Library (IEL) Conference Proceedings
IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume
IEEE Xplore All Conference Proceedings
IEEE Electronic Library (IEL)
IEEE Proceedings Order Plans (POP All) 1998-Present
DatabaseTitleList
Database_xml – sequence: 1
  dbid: RIE
  name: IEEE Xplore
  url: https://proxy.k.utb.cz/login?url=https://ieeexplore.ieee.org/
  sourceTypes: Publisher
DeliveryMethod fulltext_linktorsrc
Discipline Engineering
EISBN 9781538655993
1538655993
EISSN 2158-3242
EndPage 36
ExternalDocumentID 8570239
Genre orig-research
GroupedDBID 6IE
6IF
6IH
6IK
6IL
6IN
AAJGR
AAWTH
ADZIZ
ALMA_UNASSIGNED_HOLDINGS
BEFXN
BFFAM
BGNUA
BKEBE
BPEOZ
CBEJK
CHZPO
IPLJI
OCL
RIE
RIL
ID FETCH-LOGICAL-i175t-2ca637afe428f54b9dbc60e02d838d4e66748016a9f22e05c3d0a9d29d93981b3
IEDL.DBID RIE
IngestDate Wed Aug 27 02:46:46 EDT 2025
IsPeerReviewed false
IsScholarly false
Language English
LinkModel DirectLink
MergedId FETCHMERGED-LOGICAL-i175t-2ca637afe428f54b9dbc60e02d838d4e66748016a9f22e05c3d0a9d29d93981b3
PageCount 2
ParticipantIDs ieee_primary_8570239
PublicationCentury 2000
PublicationDate 2018-Nov.
PublicationDateYYYYMMDD 2018-11-01
PublicationDate_xml – month: 11
  year: 2018
  text: 2018-Nov.
PublicationDecade 2010
PublicationTitle 2018 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
PublicationTitleAbbrev NUSOD
PublicationYear 2018
Publisher IEEE
Publisher_xml – name: IEEE
SSID ssj0002683834
ssj0003203466
Score 1.688823
Snippet A n-p-n heterojunction phototransitor with Ge 1-x Sn x base is presented. The work is focussed on effect of Sn concentration on the gain performance of the...
SourceID ieee
SourceType Publisher
StartPage 35
SubjectTerms Absorption
Doping
GeSn alloy
Heterojunction Phototransistor
Heterojunctions
Metals
Multiple quantum well
Photonic band gap
Phototransistors
Silicon
Title Gain Performance of GeSn based n-p-n Heterojunction Phototransistor
URI https://ieeexplore.ieee.org/document/8570239
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV07b8IwED4BU7v0AVXf8tCxDsZJjD3TAqoERaJIbMivqLRSgqqw9NfXTkJoqw4dEsUeIutu-O7O930HcEeVi4sTobDpaYod4hPMuVXY6p4UMlZ9yjw5eTJl40X0tIyXDbivuTDW2qL5zAb-s7jLN5ne-lJZ14ux01A0oekSt5KrVddTKOMu2YrqdUhJGDG248kQ0Z0u5s8PvpmLB9WPfkxUKQBleAST3VHKPpL3YJurQH_-Umn871mPobOn7qFZDUon0LDpKRx-Ux1sw2Ak1yma7RkDKEvQyM5T5CHNoBRvcIrGvk8me3Ow512HZq9ZnuUe2ApdkQ4sho8vgzGuZingtQsQcky1ZGFfJtalG0kcKWGUZsQSapzZTGSZHzriwj8pEkotiXVoiBSGCiNC4ULb8AxaaZbac0DauJyJR5omPX8zbLl7G6k0JzxxD7-AtjfHalPKZawqS1z-vX0FB94lJb3vGlr5x9beOJzP1W3h4C9RwaXb
linkProvider IEEE
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV07T8MwED6VMgALjxbxxgMjTl0nce250AZoS6W2UrcqfkQUpKRC6cKvx07b8BADgy0ng2XdDd-dfd93ADdU2rg4ERLrpqLYIj7BnBuJjWrGIg5lizJHTu4PWDQJHqfhtAK3JRfGGFMUnxnPLYu3fJ2ppbsqazgxduqLLdi2uB82V2yt8kaFMm7TraD89inxA8Y2TBkiGoPJ6PnOlXNxb73Vj54qBaR09qG_OcyqkuTNW-bSUx-_dBr_e9oDqH-R99CwhKVDqJj0CPa-6Q7WoN2N5ykafnEGUJagrhmlyIGaRile4BRFrlIme7XA55yHhi9ZnuUO2gplkTpMOvfjdoTX3RTw3IYIOaYqZn4rToxNOJIwkEJLxYghVFuz6cAw13bEBoCxSCg1JFS-JrHQVGjhCxvc-sdQTbPUnABS2mZNPFA0abq3YcPtrGOpOOGJHfwUas4cs8VKMGO2tsTZ37-vYSca93uz3sPg6Rx2nXsKsh-5gGr-vjSXFvVzeVU4-xMsrakj
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Abook&rft.genre=proceeding&rft.title=2018+International+Conference+on+Numerical+Simulation+of+Optoelectronic+Devices+%28NUSOD%29&rft.atitle=Gain+Performance+of+GeSn+based+n-p-n+Heterojunction+Phototransistor&rft.au=Pandey%2C+Ankit+Kumar&rft.au=Basu%2C+Rikmantra&rft.au=Chang%2C+Guo-En&rft.date=2018-11-01&rft.pub=IEEE&rft.eissn=2158-3242&rft.spage=35&rft.epage=36&rft_id=info:doi/10.1109%2FNUSOD.2018.8570239&rft.externalDocID=8570239