Gain Performance of GeSn based n-p-n Heterojunction Phototransistor

A n-p-n heterojunction phototransitor with Ge 1-x Sn x base is presented. The work is focussed on effect of Sn concentration on the gain performance of the device based on optimised base and collector doping.

Saved in:
Bibliographic Details
Published in2018 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) pp. 35 - 36
Main Authors Pandey, Ankit Kumar, Basu, Rikmantra, Chang, Guo-En
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.11.2018
Subjects
Absorption
Doping
GeSn alloy
Heterojunction Phototransistor
Heterojunctions
Metals
Multiple quantum well
Photonic band gap
Phototransistors
Silicon
Online AccessGet full text

Cover

More Information
Summary:A n-p-n heterojunction phototransitor with Ge 1-x Sn x base is presented. The work is focussed on effect of Sn concentration on the gain performance of the device based on optimised base and collector doping.
ISSN:2158-3242
DOI:10.1109/NUSOD.2018.8570239