Characterization of a cryogenically cooled Silicon Germanium HBT amplifier

In this paper, the gain and noise performances of a DC-6 GHz microwave amplifier using commercial Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) are investigated at different bath temperatures. At room temperature, the two-stage amplifier has a gain of 21 dB and a noise figure of 3....

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Bibliographic Details
Published in2008 International Conference on Microwave and Millimeter Wave Technology Vol. 1; pp. 237 - 240
Main Authors Cao, A.Q., Liu, K., Chen, S.H., Shi, S.C.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.04.2008
Subjects
cryogenically cooled
Extraterrestrial measurements
Frequency
gain
Germanium silicon alloys
Heterojunction bipolar transistors
microwave amplifier
noise
Noise figure
Noise measurement
Radiofrequency amplifiers
Silicon germanium
Superconducting device noise
Temperature sensors
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Summary:In this paper, the gain and noise performances of a DC-6 GHz microwave amplifier using commercial Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) are investigated at different bath temperatures. At room temperature, the two-stage amplifier has a gain of 21 dB and a noise figure of 3.7 dB at 2.62 GHz. When cooled to 70 K, it demonstrates 27 dB gain and 1.5 dB noise figure at the same frequency. The gain and noise figure of another three-stage amplifier at room temperature are 34.5 dB, 3.7 dB at 2.64 GHz, respectively. When cooled to 130 K, the gain goes up to 37.5 dB; when cooled to 170 K, the noise figure goes down to 2.4 dB. The higher gain and better noise figure of this amplifier are obtained when the ambient temperature decreases.
ISBN:9781424418794
1424418798
DOI:10.1109/ICMMT.2008.4540350