Electro-mechanically induced GHz rate optical frequency modulation in silicon

We present a monolithic silicon acousto-optic frequency modulator (AOFM) operating at 1.09GHz. Employing mechanical levers to enhance displacement of the optical resonator enables an optical frequency modulation index of 0.067.

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Bibliographic Details
Published inIEEE Photonics Conference 2012 pp. 258 - 259
Main Authors Tallur, S., Bhave, S. A.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2012
Subjects
Amplitude modulation
Frequency modulation
Optical modulation
Optical pumping
Optical resonators
Resonant frequency
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Summary:We present a monolithic silicon acousto-optic frequency modulator (AOFM) operating at 1.09GHz. Employing mechanical levers to enhance displacement of the optical resonator enables an optical frequency modulation index of 0.067.
ISBN:9781457707315
1457707314
ISSN:1092-8081
2766-1733
DOI:10.1109/IPCon.2012.6358590