A 24-GHz SiGe-HBT driver amplifier with 40-dB image-rejection

A driver amplifier with a high image-rejection function was developed in 0.18-¿m SiGe BiCMOS technology to create a 24-GHz band RF transmitter. The proposed configuration for the driver amplifier uses a notch feedback circuit and a common-emitter amplifier stage and is considered to have a high imag...

Full description

Saved in:
Bibliographic Details
Published in2009 Asia Pacific Microwave Conference pp. 361 - 364
Main Authors Masuda, T., Shiramizu, N., Nakamura, T., Washio, K.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.12.2009
Subjects
BiCMOS integrated circuits
Driver amplifier
Driver circuits
Energy consumption
Feedback circuits
Germanium silicon alloys
High power amplifiers
image-rejection
notch filter
Radio frequency
Radiofrequency amplifiers
SiGe HBT
Silicon germanium
Transmitters
Online AccessGet full text

Cover

More Information
Summary:A driver amplifier with a high image-rejection function was developed in 0.18-¿m SiGe BiCMOS technology to create a 24-GHz band RF transmitter. The proposed configuration for the driver amplifier uses a notch feedback circuit and a common-emitter amplifier stage and is considered to have a high image-rejection ratio (IRR) and high power-handling capability in the quasi-millimeter-wave frequency region. The driver amplifier obtained a 6.9-dB gain at an operating frequency of 23 GHz and a 40-dB IRR at an image frequency of 16 GHz. Moreover, good large-signal characteristics such as an OP1dB of +0.3 dBm and an OIP3 of +14.5 dBm were achieved simultaneously, while the power consumption was a low 7.2 mW with a 1.5-V power supply.
ISBN:9781424428014
1424428017
ISSN:2165-4727
2165-4743
DOI:10.1109/APMC.2009.5384531