Active gate drive solutions for improving SiC JFET switching dynamics

• Published in: 2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC) pp. 2739 - 2743
• Main Authors: Shahverdi, M., Mazzola, M., Schrader, R., Lemmon, A., Parker, C., Gafford, J.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.03.2013
• Subjects: Insulated gate bipolar transistors; JFETs; Logic gates; Oscillators; Silicon carbide; Switches
• ISBN: 1467343544; 9781467343541
• ISSN: 1048-2334; 2470-6647
• DOI: 10.1109/APEC.2013.6520683

Active and Non-Active Gate Drives (AGDs and NAGDs) are known for managing switching characteristics of silicon (Si) and silicon carbide (SiC) power semiconductors. As SiC adoption has grown, the need for intelligent gate drives which are capable of managing the dynamics associated with the fast-switching characteristics of these devices has become apparent. To propose a solution for managing driven and post-driven dynamic behavior, this paper first studies the most recent AGD solutions for silicon power semiconductors with focus on closed loop schemes. The study is continued by reviewing available AGD and NAGD solutions for silicon carbide power semiconductors concentrating on the SiC JFET. Oscillatory modes which can be observed in application circuits based on SiC devices are discussed, and an AGD design example is proposed for improving the final dynamic response of such circuits. The active gate drive design example is constructed, and both simulated and empirical results are shown to substantially reduce the occurrence of natural and forced oscillations at turn-off of the SiC JFET.