Control of Source and Drain Extension Phosphorus Profile by Using Carbon Co-Implant

Carbon and fluorine co-implantation have shown encouraging junction formation improvement, especially for P-type junctions. Nevertheless, no obvious improvement is found for arsenic implants. In this paper, phosphorous with different co-implants shows that C co-implant can effectively suppress phosp...

Full description

Saved in:
Bibliographic Details
Published in2007 15th International Conference on Advanced Thermal Processing of Semiconductors pp. 127 - 130
Main Authors Li, C.I., Ron Liu, Chan, M., Hsiao, T.F., Yang, C.L., Tzou, S.F.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2007
Subjects
Annealing
Atomic layer deposition
Atomic measurements
Carbon
Centralized control
co-implantation
Electrical resistance measurement
Implants
LSA
Microelectronics
Phosphorous
Solids
Temperature
ultra shallow junction
US Department of Energy
Online AccessGet full text

Cover

More Information
Summary:Carbon and fluorine co-implantation have shown encouraging junction formation improvement, especially for P-type junctions. Nevertheless, no obvious improvement is found for arsenic implants. In this paper, phosphorous with different co-implants shows that C co-implant can effectively suppress phosphorous diffusion. With C co-implant, the junction depth decreased 42% at low temperature RTP combined with laser annealing. We implemented L18 DOE experiment with germanium, carbon, phosphorous and RTP splits, and the result shows that the dominant factors are phosphorous dosage and RTP temperature. The best Rs*Xj performance can meet 45 nm requirement.
ISBN:9781424412273
1424412277
ISSN:1944-0251
1944-026X
DOI:10.1109/RTP.2007.4383831