Linear CMOS power amplifier at Ka-band with ultra-wide video bandwidth

A highly linear power amplifier (PA) with ultra-wide video bandwidth is designed at a Ka-band for 5G application. To get a high linearity with high efficiency, a deep class-AB topology with 2 nd harmonic control circuits is employed, reducing the 3 rd order nonlinearity. Further, an efficient low-dr...

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Bibliographic Details
Published in2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) pp. 220 - 223
Main Authors Daechul Jeong, Kyunghoon Moon, Seokwon Lee, Byungjoon Park, Jihoon Kim, Juho Son, Bumman Kim
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2017
Subjects
Bandwidth
class-AB
CMOS
Gain
Harmonic analysis
harmonic control
Impedance
intermodulation distortion (IMD)
Linearity
memory effect
power amplifier (PA)
Power generation
Regulators
Ultra-wideband
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Summary:A highly linear power amplifier (PA) with ultra-wide video bandwidth is designed at a Ka-band for 5G application. To get a high linearity with high efficiency, a deep class-AB topology with 2 nd harmonic control circuits is employed, reducing the 3 rd order nonlinearity. Further, an efficient low-drop out (LDO) regulator is proposed to suppress the memory effect generated by the envelope and fundamental nonlinear mixing. The PA, composed of 3 cascaded common-source (CS) stages, achieves peak PAE of 21.8% at output power of 14 dBm with 22 dB gain. The 3 rd order inter-modulation distortion (IMD3) at an output power of 5 dBm is under -30 dBc for a video bandwidth of 1 GHz. The PA and LDO are fabricated in a 65 nm CMOS process and occupy 0.53 mm 2 .
ISSN:2375-0995
DOI:10.1109/RFIC.2017.7969057