650-V GaN-based MIS-HEMTs using LPCVD-SiNx as passivation and gate dielectric

In this work, silicon nitride (SiNx) film deposited at 780 °C by low pressure chemical vapor deposition (LPCVD) was employed as the passivation layer and gate dielectric for GaN-based MIS-HEMTs. The LPCVD-SiNx/AlGaN/GaN MIS-HEMTs exhibit suppressed current collapse, small gate leakage current at bot...

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Bibliographic Details
Published in2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) pp. 241 - 244
Main Authors Mengyuan Hua, Cheng Liu, Shu Yang, Shenghou Liu, Yunyou Lu, Kai Fu, Zhihua Dong, Yong Cai, Baoshun Zhang, Chen, Kevin J.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2015
Subjects
Aluminum gallium nitride
Dielectrics
galicum nitride
Gallium nitride
gate dielectric
Leakage currents
Logic gates
MIS-HEMT
Passivation
silicon nitride
Wide band gap semiconductors
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Summary:In this work, silicon nitride (SiNx) film deposited at 780 °C by low pressure chemical vapor deposition (LPCVD) was employed as the passivation layer and gate dielectric for GaN-based MIS-HEMTs. The LPCVD-SiNx/AlGaN/GaN MIS-HEMTs exhibit suppressed current collapse, small gate leakage current at both reverse and forward gate bias, high forward gate breakdown voltage and high time dependent gate dielectric reliability.
ISBN:9781479962594
1479962597
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.2015.7123434