Advanced 300mm 0.13μm BCD technology from 5V to 80V with highly reliable embedded Flash

This paper demonstrates the advanced 300mm 0.13μm BCD platform with high flexibility. This platform brings about the various combinations from ten kinds of device options and three kinds of wiring options. Especially, for DMOS which plays an important role on the BCD platform, the best in class low...

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Published in2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) pp. 402 - 405
Main Authors Iwamoto, K., Kori, M., Terada, C., Doguchi, T., Mihara, M., Kasa, Y., Ukai, K., Ujiie, Y., Uehara, H., Hamanaka, C., Tanaka, B., Wada, K., Shimizu, S., Shukuri, S., Izumi, N., Mifuji, M.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2014
Subjects
Automotive engineering
CMOS integrated circuits
Flash memory cells
Performance evaluation
Reliability
Wiring
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Summary:This paper demonstrates the advanced 300mm 0.13μm BCD platform with high flexibility. This platform brings about the various combinations from ten kinds of device options and three kinds of wiring options. Especially, for DMOS which plays an important role on the BCD platform, the best in class low Rdson is realized on Si-bulk. Furthermore, the highly reliable Flash memory cell is embedded on the 0.13μm BCD platform. This cell shows the excellent retention reliability of more than 20 years under 150°C after 100K erase/write cycles can be estimated.
ISBN:9781479929177
1479929174
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.2014.6856061