Structural and optical properties of ZnTe thin films
Thin films of ZnTe have been prepared by close spaced sublimation technique. The deposited films have been characterized by using optical absorption, X-ray diffraction (XRD) and scanning electron microscopy (SEM). Structural investigations performed by X-ray diffraction technique showed that studied...
Saved in:
Published in | CAS 2012 (International Semiconductor Conference) Vol. 2; pp. 321 - 324 |
---|---|
Main Authors | , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.10.2012
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Abstract | Thin films of ZnTe have been prepared by close spaced sublimation technique. The deposited films have been characterized by using optical absorption, X-ray diffraction (XRD) and scanning electron microscopy (SEM). Structural investigations performed by X-ray diffraction technique showed that studied samples are polycrystalline and have a cubic (zinc blende) structure. XRD patterns have been used to determine the microstructural parameters (crystallite size, lattice parameter) of investigated films. Surface morphology studies SEM shows that the grains are uniformly distributed over the entire surface of the substrate. Optical properties of ZnTe films were studied extensively in the range of incident photon energy (0.5-4.0) eV. In the studied ZnTe films the direct transitions take place. |
---|---|
AbstractList | Thin films of ZnTe have been prepared by close spaced sublimation technique. The deposited films have been characterized by using optical absorption, X-ray diffraction (XRD) and scanning electron microscopy (SEM). Structural investigations performed by X-ray diffraction technique showed that studied samples are polycrystalline and have a cubic (zinc blende) structure. XRD patterns have been used to determine the microstructural parameters (crystallite size, lattice parameter) of investigated films. Surface morphology studies SEM shows that the grains are uniformly distributed over the entire surface of the substrate. Optical properties of ZnTe films were studied extensively in the range of incident photon energy (0.5-4.0) eV. In the studied ZnTe films the direct transitions take place. |
Author | Maticiuc, N. Scortescu, D. Mirzac, A. Dumitriu, P. Potlog, T. |
Author_xml | – sequence: 1 givenname: T. surname: Potlog fullname: Potlog, T. email: tpotlog@gmail.com organization: Phys. Dept., Moldova State Univ., Chisinau, Moldova – sequence: 2 givenname: N. surname: Maticiuc fullname: Maticiuc, N. organization: Dept. of Mater. Sci., Tallinn Univ. of Technol., Tallinn, Estonia – sequence: 3 givenname: A. surname: Mirzac fullname: Mirzac, A. organization: Phys. Dept., Moldova State Univ., Chisinau, Moldova – sequence: 4 givenname: P. surname: Dumitriu fullname: Dumitriu, P. organization: Phys. Dept., Moldova State Univ., Chisinau, Moldova – sequence: 5 givenname: D. surname: Scortescu fullname: Scortescu, D. organization: Phys. Dept., Moldova State Univ., Chisinau, Moldova |
BookMark | eNpVkL1OwzAURg0UiVD6BF3yAgnX9o2vPaLwV6nA0CIhlsptroVRmkRJOvD2VKIL03ekI53huxaTpm1YiLmEXEpwt6uXRfl6nyuQKjcIQKTOxMyRlWhIA2mrz0WiNFEGhuzFP0dmIhJZYJFZRR9XYjYM3wBwDBtnMBG4GvvDbjz0vk59U6VtN8bdkbu-7bgfIw9pG9LPZs3p-BWbNMR6P9yIy-DrgWennYr3x4d1-Zwt354W5d0yi5KKMVMaKiRv2Bq_Na6qQiAMqIC1RY8GGZzTmtGHwmzZg1UmoCS3805Kx3oq5n_dyMybro973_9sTh_oX10pTKQ |
ContentType | Conference Proceeding |
DBID | 6IE 6IL CBEJK ESBDL RIE RIL |
DOI | 10.1109/SMICND.2012.6400772 |
DatabaseName | IEEE Electronic Library (IEL) Conference Proceedings IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume IEEE Xplore All Conference Proceedings IEEE Open Access Journals IEEE Electronic Library Online IEEE Proceedings Order Plans (POP All) 1998-Present |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: RIE name: IEEE Electronic Library Online url: https://proxy.k.utb.cz/login?url=https://ieeexplore.ieee.org/ sourceTypes: Publisher |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Engineering |
EISBN | 9781467307383 1467307386 |
EISSN | 2377-0678 |
EndPage | 324 |
ExternalDocumentID | 6400772 |
Genre | orig-research |
GroupedDBID | 6IE 6IF 6IK 6IL 6IN AAJGR ALMA_UNASSIGNED_HOLDINGS BEFXN BFFAM BGNUA BKEBE BPEOZ CBEJK ESBDL IEGSK IERZE OCL RIE RIL |
ID | FETCH-LOGICAL-i175t-230d47a6e86ab69ddff74f420e384a464e09933e4af56bea0826f4179ca9119e3 |
IEDL.DBID | RIE |
ISBN | 9781467307376 1467307378 |
ISSN | 1545-827X |
IngestDate | Wed Jun 26 19:23:27 EDT 2024 |
IsDoiOpenAccess | true |
IsOpenAccess | true |
IsPeerReviewed | false |
IsScholarly | true |
Language | English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-LOGICAL-i175t-230d47a6e86ab69ddff74f420e384a464e09933e4af56bea0826f4179ca9119e3 |
OpenAccessLink | https://proxy.k.utb.cz/login?url=https://ieeexplore.ieee.org/document/6400772 |
PageCount | 4 |
ParticipantIDs | ieee_primary_6400772 |
PublicationCentury | 2000 |
PublicationDate | 2012-Oct. |
PublicationDateYYYYMMDD | 2012-10-01 |
PublicationDate_xml | – month: 10 year: 2012 text: 2012-Oct. |
PublicationDecade | 2010 |
PublicationTitle | CAS 2012 (International Semiconductor Conference) |
PublicationTitleAbbrev | SMICND |
PublicationYear | 2012 |
Publisher | IEEE |
Publisher_xml | – name: IEEE |
SSID | ssj0001106964 ssj0000941134 |
Score | 1.8879085 |
Snippet | Thin films of ZnTe have been prepared by close spaced sublimation technique. The deposited films have been characterized by using optical absorption, X-ray... |
SourceID | ieee |
SourceType | Publisher |
StartPage | 321 |
SubjectTerms | Absorption Optical diffraction Optical films optical properties structural properties Substrates X-ray diffraction X-ray scattering ZnTe thin films |
Title | Structural and optical properties of ZnTe thin films |
URI | https://ieeexplore.ieee.org/document/6400772 |
Volume | 2 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV07T8MwELZKJ1h4tIi3PDDiNE5cP2YeqpBaIbWVKpbKTs6iApIK0oVfj-2k5SEGtiRLfLnY_u7z3XcIXcoEtLIgXVgiDWHSKKJSbok_ouFcJUYETw9HfDBl97P-rIWuNrUwABCSzyDyl-EsPy-zlafKetw38RZuwd0SStW1Whs-xYUplDZSZ4FfcbGOCupRHiQQmYhZqOviwv_VQq7lnpp73igS0Vj1xu4DjG582lcSNa_80XslbD13u2i4HnSdcfIcrSoTZR-_9Bz_a9Ue6n4V-eGHzfa1j1pQHKCdb_qEHcTGQV3WK3NgXeS4XAbmGy89g__mpVhxafFjMQFcPS0KbBcvr-9dNL27nVwPSNNmgSwcdqiIC0JyJjQHybXhKs-tFcyyJIZUMs04A4ci0xSYtn1uQDvQwK1vXJZpt1IqSA9RuygLOEKYUoAUtFFWpYzlbnZTaqzM4thmvG_tMep4--fLWklj3ph-8vfjU7TtfVCnzp2htjMZzh0EqMxF8P0noQqnbQ |
link.rule.ids | 310,311,783,787,792,793,799,27937,55086 |
linkProvider | IEEE |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV07T8MwELYqGICFR4t444GRpHm4F3sGqgJthdRWqlgqOzmLCkgrSBd-PbaTlocY2OIsztmO_d3nu-8IueARSqGRG7eEK49xJTwRg_bsFQ2AiFTiZrrXh86I3Y1b4xq5XOXCIKILPkPfPrq7_GyWLixV1gRbxDsxG-66wdUcymytFaNiHJUwrMTOHMNivB3h9KMsTPB4lIxdZhckdl0nfCn4VLWh0iQKA9EcmCHoX9vAr8ivOv1RfcUdPu1t0lt-dhlz8uwvCuWnH78UHf9r1w5pfKX50YfVAbZLapjvka1vCoV1wgZOX9Zqc1CZZ3Q2d9w3nVsO_82KsdKZpo_5EGnxNM2pnr68vjfIqH0zvOp4VaEFb2rQQ-EZNyRjiQTkIBWILNM6YZpFAcacSQYMDY6MY2RSt0ChNLABtC1dlkqzVwqM98laPsvxgNAwRIxRKqFFzFhm_u8wVJqnQaBTaGl9SOrW_sm81NKYVKYf_f36nGx0hr3upHvbvz8mm3Y-ykC6E7JmzMdTAwgKdebWwSebtKq4 |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Abook&rft.genre=proceeding&rft.title=CAS+2012+%28International+Semiconductor+Conference%29&rft.atitle=Structural+and+optical+properties+of+ZnTe+thin+films&rft.au=Potlog%2C+T.&rft.au=Maticiuc%2C+N.&rft.au=Mirzac%2C+A.&rft.au=Dumitriu%2C+P.&rft.date=2012-10-01&rft.pub=IEEE&rft.isbn=9781467307376&rft.issn=1545-827X&rft.eissn=2377-0678&rft.volume=2&rft.spage=321&rft.epage=324&rft_id=info:doi/10.1109%2FSMICND.2012.6400772&rft.externalDocID=6400772 |
thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=1545-827X&client=summon |
thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=1545-827X&client=summon |
thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=1545-827X&client=summon |