A general procedure for extraction of bias dependent dynamic self heating model parameters

A general method for characterizing electrothermal interaction due to self heating is proposed. The characterization is performed using only electrical measurements and is directly applicable to a wide range of device technologies. A rigorous small-signal analysis of the electrothermal problem forms...

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Bibliographic Details
Published inIEEE MTT-S International Microwave Symposium Digest, 2005 pp. 1159 - 1162
Main Authors Andersson, K., Fager, C., Pedro, J.C.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2005
Subjects
Electric resistance
Electromagnetic heating
Electrothermal effects
Heat sinks
Laboratories
Microwave devices
Microwave theory and techniques
Temperature dependence
Thermal resistance
Voltage
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Summary:A general method for characterizing electrothermal interaction due to self heating is proposed. The characterization is performed using only electrical measurements and is directly applicable to a wide range of device technologies. A rigorous small-signal analysis of the electrothermal problem forms the basis for the characterization and model parameter extraction technique. The proposed technique allows for extraction of both the thermal impedance and the thermal coefficient. The small-signal analysis is valid for any N-port subject to self-heating from a single heat source. The method is demonstrated on a 200 μm pHEMT device
ISBN:9780780388451
0780388453
ISSN:0149-645X
DOI:10.1109/MWSYM.2005.1516881