A Investigation into X-ray Radiation of VDMOS

In this study, the investigation into X-ray radiation of VDMOS is described. A radiation test of VDMOS was made by X-ray at various loads. The different radiation behavior of VDMOS was observed. The "rebound" of the threshold voltage shift of VDMOS at a larger load with X-ray radiation was...

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Bibliographic Details
Published in2007 International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications pp. 300 - 304
Main Authors Tan Kaizhou, Hu Gangyi, Yang Mohua, Zhang Bo, Xu Shiliu, Li Zehong, Liu Yukui, He Kaiquan, Zhang Lei
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.08.2007
Subjects
Annealing
Circuit testing
Integrated circuit technology
Ionization
Ionizing radiation
Microwave technology
Radiation effects
satellite
Satellites
Solid state circuits
Threshold voltage
VDMOS
X-ray Radiation
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Summary:In this study, the investigation into X-ray radiation of VDMOS is described. A radiation test of VDMOS was made by X-ray at various loads. The different radiation behavior of VDMOS was observed. The "rebound" of the threshold voltage shift of VDMOS at a larger load with X-ray radiation was larger than that without X-ray radiation, indicating that a radiation annealing effect happened to VDMOS at a powerful load. In terms of transconductance, all the radiated samples showed an increase in interface traps (Qit). At 9.84 X 10 5 rad (Si), the interface traps increments at a large load and at a small load were 6.3 X 10 11 cm 2 and 5.12 X 10 11 /cm 2 , respectively. A timely annealing effect is a major factor contributing to the "rebound" of the threshold voltage shift, and caused by anneal of VDMOS weak inversion interface traps whose equivalent charge is -2.31 X 10 11 /cm 2 .
ISBN:9781424410446
1424410444
DOI:10.1109/MAPE.2007.4393606