High Speed Carrier Injection 18 Gb/s Silicon Micro-ring Electro-optic Modulator

We experimentally demonstrate electrooptic modulation in silicon at 18 Gbps (NRZ) in a micro-ring of 12 micron diameter using a pre-emphasis technique. Device simulations indicate that this technique can extend the bit rate to 40 Gbps.

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Bibliographic Details
Published inLEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings pp. 537 - 538
Main Authors Manipatruni, S., Qianfan Xu, Schmidt, B., Shakya, J., Lipson, M.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2007
Subjects
Bit rate
Charge carrier density
Delay
Electrooptic modulators
Optical ring resonators
Optical waveguides
P-i-n diodes
PIN photodiodes
Silicon
Voltage
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Summary:We experimentally demonstrate electrooptic modulation in silicon at 18 Gbps (NRZ) in a micro-ring of 12 micron diameter using a pre-emphasis technique. Device simulations indicate that this technique can extend the bit rate to 40 Gbps.
ISBN:1424409241
9781424409242
ISSN:1092-8081
2766-1733
DOI:10.1109/LEOS.2007.4382517