Physics-Based Modelling of Ballistic Transport in Nanoscale Transistor

The ballistic transport of the carriers is predicted when the channel length of the transistor is less than the scattering-limited mean-free path. In this paper, the saturation velocity is found to be ballistic regardless of the device dimensions. This saturation velocity is limited by the intrinsic...

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Bibliographic Details
Published in2009 Third Asia International Conference on Modelling & Simulation pp. 729 - 734
Main Authors Saad, I., Lee, R.M.A., Ismail, R., Arora, V.K.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2009
Subjects
Asia
Ballistic transport
Effective mass
Electrons
Electrooptic effects
MOSFET circuits
Particle scattering
Potential well
Predictive models
Temperature dependence
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Summary:The ballistic transport of the carriers is predicted when the channel length of the transistor is less than the scattering-limited mean-free path. In this paper, the saturation velocity is found to be ballistic regardless of the device dimensions. This saturation velocity is limited by the intrinsic velocity. Its does not sensitively depend on the ballistic or scattering-limited nature of the mobility. In the degenerate realm, the saturation velocity is shown to be the Fermi velocity that is independent of temperature but strongly dependent on carrier concentration. In the non-degenerate realm, the intrinsic velocity is the thermal velocity that depends only on the ambient temperature. The drain carrier velocity is revealed to be smaller than the saturation velocity due to the presence of a finite electric field. An excellent agreement of the models developed and applied to 80-nm-channel-length MOSFET validates the physics behind ballistic transport.
ISBN:9781424441549
1424441544
ISSN:2376-1164
DOI:10.1109/AMS.2009.46