A bandgap voltage reference structure with improved temperature coefficient by eliminating the β effect

The proposed structure utilizes two transistors to generate a PTAT and a CTAT currents, then sums them up according to certain proportion in the surrounding topological structure of the triodes, finally builds the reference current which is temperature-independent and β-independent. The performance...

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Bibliographic Details
Published in2016 IEEE International Nanoelectronics Conference (INEC) pp. 1 - 2
Main Authors Yongbo Liao, Zongbo Wang
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2016
Subjects
bandgap voltage reference
CMOS process
CTAT
Photonic band gap
PTAT
Resistors
Temperature distribution
temperature independent
Temperature measurement
Transistors
β independent
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Summary:The proposed structure utilizes two transistors to generate a PTAT and a CTAT currents, then sums them up according to certain proportion in the surrounding topological structure of the triodes, finally builds the reference current which is temperature-independent and β-independent. The performance has been verified and consolidated through both simulate and tap-out measurement. The temperature coefficient of the fabricated chip is 17.2ppm V/°C during the temperature from -40°C to +120°C. It is proposed to improve the reliability of the CMOS process bandgap voltage reference circuit.
ISSN:2159-3531
DOI:10.1109/INEC.2016.7589346