Multi-level phase change memory using slow-quench operation: GST vs. GSST

In this paper, we demonstrate the use of a slow-quench waveform for multi-level phase change memory operation and compare the use of Ge 21 Sn 10 Sb 15 Te 54 (GSST) and Ge 2 Sb 2 Te 5 (GST). A faster multilevel operation is possible with the use of GSST, owing to its faster crystallization speed.

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Bibliographic Details
Published in2009 International Symposium on VLSI Technology, Systems, and Applications pp. 39 - 40
Main Authors Der-Sheng Chao, Chen, F.T., Yen-Ya Hsu, Wen-Hsing Liu, Chain-Ming Lee, Chih-Wei Chen, Wei-Su Chen, Ming-Jer Kao, Ming-Jinn Tsai
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.04.2009
Subjects
Amorphous materials
Chaos
Crystallization
Dielectrics
Electrical resistance measurement
Electrodes
Phase change materials
Phase change memory
Temperature measurement
Voltage
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Summary:In this paper, we demonstrate the use of a slow-quench waveform for multi-level phase change memory operation and compare the use of Ge 21 Sn 10 Sb 15 Te 54 (GSST) and Ge 2 Sb 2 Te 5 (GST). A faster multilevel operation is possible with the use of GSST, owing to its faster crystallization speed.
ISBN:1424427843
9781424427840
ISSN:1524-766X
2690-8174
DOI:10.1109/VTSA.2009.5159282