AlGaN/GaN HEMTs with PAE of 53% at 35 GHz for HPA and Multi-Function MMIC Applications

We would like to report on AlGaN/GaN HEMTs on SiC substrate with stat-of the-art power performance at Ka-band. Power gains of 5.6, 6.3 and 6.7 dB and peak PAE of 53, 53 and 51% were measured at 35 GHz when 200-μm GaN HEMTs were biased at 10, 15 and 20 volts, respectively. At 10 GHz, 400-μm GaN HEMTs...

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Bibliographic Details
Published in2007 IEEE/MTT-S International Microwave Symposium pp. 627 - 629
Main Authors Ming-Yih Kao, Lee, C., Hajji, R., Saunier, P., Hua-Quen Tserng
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2007
Subjects
Aluminum gallium nitride
Gain measurement
Gallium nitride
HEMT
HEMTs
microwave FETs
millimeter wave FETs
MMIC power amplifiers
MMICs
MODFETs
Noise figure
Power generation
Power measurement
Silicon carbide
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Summary:We would like to report on AlGaN/GaN HEMTs on SiC substrate with stat-of the-art power performance at Ka-band. Power gains of 5.6, 6.3 and 6.7 dB and peak PAE of 53, 53 and 51% were measured at 35 GHz when 200-μm GaN HEMTs were biased at 10, 15 and 20 volts, respectively. At 10 GHz, 400-μm GaN HEMTs exhibited maximum PAE of 67%, power gain of 11.3 dB and power density of 5.6 W/mm when devices were biased at 30 volts. Furthermore, we have also achieved 36 to 38.7 dBm TOI at a wide range of 10 to 26 dBm total output power for a 400-μm GaN HEMT. Very low noise figures of 1.4 dB at 26 GHz were measured on 100, 200 and 300-μm wide GaN HEMTs as well. In this work, we have demonstrated that GaN HEMTs on SiC substrate is a much superior device technology to GaAs-based pHEMT for microwave applications up through Ka-band.
ISBN:1424406870
9781424406876
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2007.379979