Spontaneous recombination lifetime in compressively strained InGaAs quantum well lasers with InGaAsP and GaAs barrier/waveguide layers

Spontaneous carrier recombination lifetime increases with indium content in compressively strained InGaAs quantum well lasers grown on GaAs. It also becomes longer in lasers with wider bandgap InGaAsP barrier/waveguide layers by replacing the GaAs ones

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Bibliographic Details
Published inInternational Conference on Indium Phosphide and Related Materials, 2005 pp. 574 - 577
Main Authors Susaki, W., Ukawa, S.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2005
Subjects
Gallium arsenide
Indium gallium arsenide
Laser transitions
Pulse measurements
Quantum well lasers
Radiative recombination
Spontaneous emission
Temperature
Threshold current
Waveguide lasers
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Summary:Spontaneous carrier recombination lifetime increases with indium content in compressively strained InGaAs quantum well lasers grown on GaAs. It also becomes longer in lasers with wider bandgap InGaAsP barrier/waveguide layers by replacing the GaAs ones
ISBN:9780780388918
0780388917
ISSN:1092-8669
DOI:10.1109/ICIPRM.2005.1517562