Optical characterisation of InGaAs/InP and InGaAs/InGaAsP MQW structures for optoelectronic applications

We performed CW and time resolved photoluminescence (PL) measurements on on a series of conventional InGaI/InP MQW structures grown by low pressure metal organic vapor phase epitaxy (LP-MOVPE). Variation of sample temperature allows to distinct between regions with different well widths in CW experi...

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Bibliographic Details
Published inESSDERC '90: 20th European Solid State Device Research Conference pp. 405 - 408
Main Authors Wolter, K., Schwedler, R., Reinhardt, F., Kersting, R, Zhou, X Q., Grutzmacher, D, Kurz, H
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.1990
Subjects
Epitaxial growth
Indium gallium arsenide
Indium phosphide
Performance evaluation
Phase measurement
Photoluminescence
Pressure measurement
Quantum well devices
Temperature
Time measurement
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Summary:We performed CW and time resolved photoluminescence (PL) measurements on on a series of conventional InGaI/InP MQW structures grown by low pressure metal organic vapor phase epitaxy (LP-MOVPE). Variation of sample temperature allows to distinct between regions with different well widths in CW experinments. The relative sizes of areas vith different well widths are determined. In time resolved PL experiments the carrier capture from the barriers into the quantum wells has been investigated. An ambipolar capture time constant of 5 ± 2 ps is evaluated. Finally the optical gain of these structures is compared with InGaAs/ InP- and InGaAsP/InP-MQW-separate-confinement structures.
ISBN:9780750300650
0750300655