Numerical simulation of HgCdTe nBn long-wavelength infrared detector

• Published in: 2018 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) pp. 17 - 18
• Main Authors: He, Jiale, Hu, Weida
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.11.2018
• Subjects: Absorption; Cadmium compounds; Dark current; Doping; HgCdTe; II-VI semiconductor materials; Infrared detectors; nBn structure; Numerical simulation

HgCdTe nBn device is a kind of unipolar barrier layer in which the B layer is a wide band gap barrier layer with a thickness of several tens of nanometers, and could effectively reduce the dark current and the process difficulty of HgCdTe device. The photoelectric properties of HgCdTe nBn infrared d...