Numerical simulation of HgCdTe nBn long-wavelength infrared detector

HgCdTe nBn device is a kind of unipolar barrier layer in which the B layer is a wide band gap barrier layer with a thickness of several tens of nanometers, and could effectively reduce the dark current and the process difficulty of HgCdTe device. The photoelectric properties of HgCdTe nBn infrared d...

Full description

Saved in:
Bibliographic Details
Published in2018 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) pp. 17 - 18
Main Authors He, Jiale, Hu, Weida
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.11.2018
Subjects
Absorption
Cadmium compounds
Dark current
Doping
HgCdTe
II-VI semiconductor materials
Infrared detectors
nBn structure
Numerical simulation
Online AccessGet full text

Cover

More Information
Summary:HgCdTe nBn device is a kind of unipolar barrier layer in which the B layer is a wide band gap barrier layer with a thickness of several tens of nanometers, and could effectively reduce the dark current and the process difficulty of HgCdTe device. The photoelectric properties of HgCdTe nBn infrared detectors are studied by two-dimensional numerical simulation. The energy band structure of the nBn structure and the influence of the structural parameters on the performance of the device are theoretically calculated, which provides guidance for designing or optimizing the structure of HgCdTe nBn infrared detector.
ISSN:2158-3242
DOI:10.1109/NUSOD.2018.8570283