Reliability of HfSiON as gate dielectric for advanced CMOS technology

Optimizing nitrogen incorporation in HfSiON gate dielectric can improve overall reliability, e.g. nMOS PBTI lifetime, hot carrier (HC) lifetime, time-to-breakdown (tBD), without adverse effects on pMOS NBT1 lifetime and electron/hole mobility. The improvement is attributed to excellent thermal stabi...

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Published inDigest of Technical Papers. 2005 Symposium on VLSI Technology, 2005 pp. 170 - 171
Main Authors Wang, H.C.-H., Ching-Wei Tsai, Shang-Jr Chen, Chien-Tai Chan, Huan-Just Lin, Ying Jin, Hun-Jan Tao, Shih-Chang Chen, Diaz, C.H., Tongchern Ong, Oates, A.S., Mong-Song Liang, Min-Hwa Chi
Format Conference Proceeding
LanguageEnglish
Published IEEE 2005
Subjects
Charge carrier processes
CMOS technology
Dielectrics
Electron mobility
Electron traps
Hot carriers
MOS devices
Nitrogen
Thermal stability
Thermal stresses
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Summary:Optimizing nitrogen incorporation in HfSiON gate dielectric can improve overall reliability, e.g. nMOS PBTI lifetime, hot carrier (HC) lifetime, time-to-breakdown (tBD), without adverse effects on pMOS NBT1 lifetime and electron/hole mobility. The improvement is attributed to excellent thermal stability against partial-crystallization after 1100/spl deg/C annealing, and the concomitantly reduced trap generation minimizes stress induced leakage current (SILC) and flicker noise degradation after PBTI stress. A new methodology is proposed, for the first time, to correctly predict HC lifetime of HfSiON nMOS based on electron trapping.
ISBN:4900784001
9784900784000
ISSN:0743-1562
DOI:10.1109/.2005.1469255