Influence of doping concentration and contact geometry on the performance of interdigitated back-contact silicon heterojunction of liquid phase crystalline silicon on glass

This work reports on the effect of doping concentration and contact geometry in interdigitated back-contact silicon heterojunction (IBC-SHJ) cell with liquid phase crystallized silicon (LPC-Si). Doping concentration of 3 \times 10 ^{16}cm^{-3} and back surface field (BSF) finger width of 120 μm at e...

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Published in2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) pp. 3218 - 3222
Main Authors Trinh, Cham Thi, Bokalic, Matevz, Preissler, Natalie, Trahms, Martina, Schlatmann, Rutger, Amkreutz, Daniel, Topic, Marko
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2018
Subjects
bulk lifetime
Doping
electroluminescence
Fingers
Glass
Grain boundaries
light beam induced current
Liquid phase crystallized silicon
Resistance
Silicon
Surface morphology
surface recombination
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Summary:This work reports on the effect of doping concentration and contact geometry in interdigitated back-contact silicon heterojunction (IBC-SHJ) cell with liquid phase crystallized silicon (LPC-Si). Doping concentration of 3 \times 10 ^{16}cm^{-3} and back surface field (BSF) finger width of 120 μm at emitter width of 1080 μm are demonstrated as optimized conditions to get the highest average cell efficiency. Spatially resolved methods such as light beam induced current (LBIC), photoluminescence (PL) and electroluminescence (EL) were used to investigate current losses. LBIC records showed that back-surface field (BSF) fingers were not well passivated and caused a loss of 2.6-2.7 mA/cm 2 . Grain boundaries (GBs)/dislocations mainly contributed to a current loss of 3.6-4.0 mA/cm 2 corresponding to a relative loss of 11-12%.
DOI:10.1109/PVSC.2018.8547408