A 2 Watt, Sub-dB Noise Figure GaN MMIC LNA-PA Amplifier with Multi-octave Bandwidth from 0.2-8 GHz

This paper reports on a 0.2-8 GHz high dynamic range GaN MMIC LNA-PA which achieves sub-dB noise figure and a PldB of 2 watts. The GaN MMIC utilizes a 0.2 mum AlGaN/GaN-SiC HEMT technology with an fT ~75 GHz. At high power bias (15 V/400 mA), the MMIC amplifier achieves sub-dB NF ~0.7-0.9 dB over a...

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Bibliographic Details
Published in2007 IEEE/MTT-S International Microwave Symposium pp. 619 - 622
Main Authors Kobayashi, K.W., Yao Chung Chen, Smorchkova, I., Tsai, R., Wojtowicz, M., Oki, A.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2007
Subjects
Aluminum gallium nitride
Bandwidth
Dynamic range
Frequency
Gallium nitride
GaN HEMT
HEMTs
High power amplifiers
Low Noise Amplifier (LNA)
MMICs
Noise figure
Noise measurement
Power Amplifier (PA)
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Summary:This paper reports on a 0.2-8 GHz high dynamic range GaN MMIC LNA-PA which achieves sub-dB noise figure and a PldB of 2 watts. The GaN MMIC utilizes a 0.2 mum AlGaN/GaN-SiC HEMT technology with an fT ~75 GHz. At high power bias (15 V/400 mA), the MMIC amplifier achieves sub-dB NF ~0.7-0.9 dB over a 2-8 GHz band. At low bias(12 V, 200 mA), the amplifier achieves ~0.5dB over the same band. This is believe to be the lowest NF reported for a multi-octave MMIC amplifier in the S-and C-band frequency range. In addition, the amplifier obtains ultra high linearity with an OIP3 of 43.2-46.5 dBm and P1 dB of 32.8-33.2 dBm (2 watts) over a 2-6 GHz bandwidth. The PAE at P1 dB is ~28.6-31%. The Psat is 34.2 dBm with 39% PAE @ 2 GHz. To our knowledge, this is the first report of a multi-octave MMIC amplifier with sub-dB NF and a pout >2 Watt.
ISBN:1424406870
9781424406876
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2007.379977