Double-drift diodes for super wideband noise oscillator with increased noise level

50...70 dB/kT 0 ENR levels are obtained during avalanche diode in anomaly mode based wideband noise oscillators research. Specially developed impulse method makes double-drift diodepsilas selection possible just as allows to determine drift region chargepsilas asymmetry for obtaining great ENR level...

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Bibliographic Details
Published in2008 4th International Conference on Ultrawideband and Ultrashort Impulse Signals pp. 147 - 149
Main Authors Loshitski, P. P., Pavlyuchenko, A. V.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2008
Subjects
anomaly mode
avalanche diode
Circuits
Diodes
ENR
Microwave frequencies
Microwave oscillators
Narrowband
Noise level
p- and n- drift region's asymmetry
Plasma applications
Plasma immersion ion implantation
Ultra wideband technology
Voltage
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Summary:50...70 dB/kT 0 ENR levels are obtained during avalanche diode in anomaly mode based wideband noise oscillators research. Specially developed impulse method makes double-drift diodepsilas selection possible just as allows to determine drift region chargepsilas asymmetry for obtaining great ENR level.
ISBN:9781424427383
142442738X
DOI:10.1109/UWBUS.2008.4669388