Direct comparison of silicon and silicon carbide power transistors in high-frequency hard-switched applications

• Published in: 2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC) pp. 1049 - 1056
• Main Authors: Glaser, J S, Nasadoski, J J, Losee, P A, Kashyap, A S, Matocha, K S, Garrett, J L, Stevanovic, L D
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.03.2011
• Subjects: Converters; Insulated gate bipolar transistors; Logic gates; Loss measurement; MOSFETs; Silicon; Silicon carbide
• ISBN: 9781424480845; 1424480841
• ISSN: 1048-2334; 2470-6647
• DOI: 10.1109/APEC.2011.5744724

RECENT progress in wide bandgap power (WBG) switches shows great potential. Silicon carbide (SiC) is a promising material for power devices with breakdown voltages of several hundred volts up to 10 kV. SiC Schottky power diodes have achieved widespread commercial acceptance. Recently, much progress has been made on active SiC switches, including JFETs, thyristors, BJTs, IGBTs, and MOSFETs. Many a great promise has been made, and wondrous claims abound, but the question remains: will they live up to the hype? We explore this question for the class of high-frequency, hard-switched converters with input voltages of up to 600 VDC and power throughputs in the kilowatt range. Experimental evidence shows that both superior efficiency and higher power density may be obtained via the use of SiC MOSFETs. A direct comparison is made using silicon power devices (IGBTs and MOSFETs) and SiC MOSFETs in a 200 kHz, 6 kW, 600 V hard-switched converter. The losses are measured and conduction and switching losses of the active devices are estimated. Total losses can be reduced by a factor of 2-5 by substitution of SiC MOSFETs for Si active power devices.