Characterisation of low temperature and semi-insulating GaAs lateral photo-dember THz emitters

We characterise a set of Lateral Photo Dember (LPD) terahertz emitters fabricated on annealed low temperature grown (LTG) GaAs, unannealed LTG-GaAs and SI-GaAs substrates. Our results show that unannealed LTG-GaAs is the most efficient LPD emitter of this set due to a higher saturation fluence.

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Bibliographic Details
Published in2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) pp. 1 - 2
Main Authors McBryde, Duncan, Barnes, Mark E., Gow, Paul C., Berry, Sam A., Daniell, Geoff J., Beere, Harvey E., Ritchie, David A., Apostolopoulos, Vasilis
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2013
Subjects
Metals
Optical pulses
Optical pumping
Optical receivers
Optical saturation
Stimulated emission
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Summary:We characterise a set of Lateral Photo Dember (LPD) terahertz emitters fabricated on annealed low temperature grown (LTG) GaAs, unannealed LTG-GaAs and SI-GaAs substrates. Our results show that unannealed LTG-GaAs is the most efficient LPD emitter of this set due to a higher saturation fluence.
ISSN:2162-2027
DOI:10.1109/IRMMW-THz.2013.6665658